Tehniskie dokumenti
Specifikācija
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
90 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
6000 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 2.9 x 1.3mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
€ 26,50
€ 0,265 Katrs (tiek piegadats Rulli) (bez PVN)
€ 32,06
€ 0,321 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
€ 26,50
€ 0,265 Katrs (tiek piegadats Rulli) (bez PVN)
€ 32,06
€ 0,321 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Rullis |
---|---|---|
100 - 240 | € 0,265 | € 2,65 |
250 - 490 | € 0,251 | € 2,51 |
500 - 990 | € 0,237 | € 2,37 |
1000+ | € 0,226 | € 2,26 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
90 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
6000 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 2.9 x 1.3mm
Maximum Operating Temperature
+150 °C
Produkta apraksts