Tehniskie dokumenti
Specifikācija
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
80 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Maximum Power Dissipation
580 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
8 GHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
2 x 1.25 x 0.8mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,072
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,087
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
€ 0,072
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,087
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
Tehniskie dokumenti
Specifikācija
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
80 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Maximum Power Dissipation
580 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
8 GHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
2 x 1.25 x 0.8mm
Maximum Operating Temperature
+150 °C
Produkta apraksts