Tehniskie dokumenti
Specifikācija
Brand
InfineonTransistor Type
NPN/PNP
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
65 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
250 MHz
Pin Count
6
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
2 x 1.25 x 0.9mm
Produkta apraksts
Dual NPN/PNP Transistors, Infineon
Bipolar Transistors, Infineon
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,233
Katrs (Paka ir 200) (bez PVN)
€ 0,282
Katrs (Paka ir 200) (Ieskaitot PVN)
Standarts
200
€ 0,233
Katrs (Paka ir 200) (bez PVN)
€ 0,282
Katrs (Paka ir 200) (Ieskaitot PVN)
Standarts
200
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
200 - 800 | € 0,233 | € 46,60 |
1000 - 1800 | € 0,167 | € 33,40 |
2000+ | € 0,159 | € 31,80 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonTransistor Type
NPN/PNP
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
65 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
250 MHz
Pin Count
6
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
2 x 1.25 x 0.9mm
Produkta apraksts