Tehniskie dokumenti
Specifikācija
Brand
InfineonOutput Current
420 mA
Supply Voltage
17.5V
Pin Count
28
Package Type
DSO
Fall Time
45ns
Number of Outputs
6
Rise Time
100ns
Topology
Galvanic Isolated
High and Low Sides Dependency
Independent
Time Delay
800ns
Number of Drivers
6
Bridge Type
Full Bridge
Polarity
Non-Inverting
Mounting Type
Surface Mount
Izcelsmes valsts
Malaysia
Produkta apraksts
EiceDRIVER 3-Phase Gate Drive IC, Infineon
3-phase 600V MOSFET and IGBT gate driver ICs from Infineon based on proven existing SOI-technology. The absence of parasitic thyristor structures in these rugged devices prevents latch-up under all normal operating conditions. The drivers include under-voltage over-current detection and can be controlled by CMOS or LSTTL compatible signals down to 3.3V.
MOSFET & IGBT Drivers, Infineon (International Rectifier)
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,85
Katrs (Rulli ir 1000) (bez PVN)
€ 2,238
Katrs (Rulli ir 1000) (Ieskaitot PVN)
1000
€ 1,85
Katrs (Rulli ir 1000) (bez PVN)
€ 2,238
Katrs (Rulli ir 1000) (Ieskaitot PVN)
1000
Tehniskie dokumenti
Specifikācija
Brand
InfineonOutput Current
420 mA
Supply Voltage
17.5V
Pin Count
28
Package Type
DSO
Fall Time
45ns
Number of Outputs
6
Rise Time
100ns
Topology
Galvanic Isolated
High and Low Sides Dependency
Independent
Time Delay
800ns
Number of Drivers
6
Bridge Type
Full Bridge
Polarity
Non-Inverting
Mounting Type
Surface Mount
Izcelsmes valsts
Malaysia
Produkta apraksts
EiceDRIVER 3-Phase Gate Drive IC, Infineon
3-phase 600V MOSFET and IGBT gate driver ICs from Infineon based on proven existing SOI-technology. The absence of parasitic thyristor structures in these rugged devices prevents latch-up under all normal operating conditions. The drivers include under-voltage over-current detection and can be controlled by CMOS or LSTTL compatible signals down to 3.3V.