Diodes Inc N-Channel MOSFET, 2 A, 30 V, 3-Pin SOT-23 ZXMN3A01FTA

RS noliktavas nr.: 922-7850Ražotājs: DiodesZetexRažotāja kods: ZXMN3A01FTA
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

806 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.05mm

Typical Gate Charge @ Vgs

3.9 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Germany

Produkta apraksts

N-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Noliktavas stāvoklis patreiz nav pieejams

€ 375,00

€ 0,125 Katrs (Rulli ir 3000) (bez PVN)

€ 453,75

€ 0,151 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Diodes Inc N-Channel MOSFET, 2 A, 30 V, 3-Pin SOT-23 ZXMN3A01FTA

€ 375,00

€ 0,125 Katrs (Rulli ir 3000) (bez PVN)

€ 453,75

€ 0,151 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Diodes Inc N-Channel MOSFET, 2 A, 30 V, 3-Pin SOT-23 ZXMN3A01FTA
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

806 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.05mm

Typical Gate Charge @ Vgs

3.9 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Germany

Produkta apraksts

N-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more