Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
30 V
Series
DMP
Package Type
DI5060
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Length
5.1mm
Number of Elements per Chip
1
Width
6mm
Typical Gate Charge @ Vgs
64.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.1mm
Produkta apraksts
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 910,00
€ 0,364 Katrs (Rulli ir 2500) (bez PVN)
€ 1 101,10
€ 0,44 Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
€ 910,00
€ 0,364 Katrs (Rulli ir 2500) (bez PVN)
€ 1 101,10
€ 0,44 Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
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Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
30 V
Series
DMP
Package Type
DI5060
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Length
5.1mm
Number of Elements per Chip
1
Width
6mm
Typical Gate Charge @ Vgs
64.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.1mm
Produkta apraksts