Vishay N-Channel MOSFET, 57 A, 200 V, 3-Pin TO-220AB SUP57N20-33-E3

RS noliktavas nr.: 708-5014Ražotājs: VishayRažotāja kods: SUP57N20-33-E3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

57 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

90 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+175 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 22,25

€ 4,45 Katrs (Paka ir 5) (bez PVN)

€ 26,92

€ 5,384 Katrs (Paka ir 5) (Ieskaitot PVN)

Vishay N-Channel MOSFET, 57 A, 200 V, 3-Pin TO-220AB SUP57N20-33-E3
Izvēlēties iepakojuma veidu

€ 22,25

€ 4,45 Katrs (Paka ir 5) (bez PVN)

€ 26,92

€ 5,384 Katrs (Paka ir 5) (Ieskaitot PVN)

Vishay N-Channel MOSFET, 57 A, 200 V, 3-Pin TO-220AB SUP57N20-33-E3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
5 - 20€ 4,45€ 22,25
25 - 45€ 3,85€ 19,25
50 - 120€ 3,30€ 16,50
125 - 245€ 3,15€ 15,75
250+€ 2,70€ 13,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

57 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

90 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+175 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more