Vishay P-Channel MOSFET, 55 A, 60 V, 3-Pin D2PAK SUM55P06-19L-E3

RS noliktavas nr.: 710-5020PRažotājs: VishayRažotāja kods: SUM55P06-19L-E3
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Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

19 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

76 nC @ 10 V

Width

9.65mm

Height

4.83mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 122,50

€ 2,45 Katrs (tiek piegadats Rulli) (bez PVN)

€ 148,22

€ 2,964 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Vishay P-Channel MOSFET, 55 A, 60 V, 3-Pin D2PAK SUM55P06-19L-E3
Izvēlēties iepakojuma veidu

€ 122,50

€ 2,45 Katrs (tiek piegadats Rulli) (bez PVN)

€ 148,22

€ 2,964 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Vishay P-Channel MOSFET, 55 A, 60 V, 3-Pin D2PAK SUM55P06-19L-E3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Rullis
50 - 120€ 2,45€ 12,25
125 - 245€ 2,25€ 11,25
250 - 495€ 2,15€ 10,75
500+€ 1,70€ 8,50

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

19 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

76 nC @ 10 V

Width

9.65mm

Height

4.83mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more