Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.55mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 23,00
€ 1,15 Katrs (Paka ir 20) (bez PVN)
€ 27,83
€ 1,392 Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
€ 23,00
€ 1,15 Katrs (Paka ir 20) (bez PVN)
€ 27,83
€ 1,392 Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
20 - 80 | € 1,15 | € 23,00 |
100 - 180 | € 0,869 | € 17,38 |
200 - 480 | € 0,802 | € 16,04 |
500 - 980 | € 0,63 | € 12,60 |
1000+ | € 0,595 | € 11,90 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.55mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts