Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.15 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
3.3 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.02mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 1 092,00
€ 0,364 Katrs (Rulli ir 3000) (bez PVN)
€ 1 321,32
€ 0,44 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 1 092,00
€ 0,364 Katrs (Rulli ir 3000) (bez PVN)
€ 1 321,32
€ 0,44 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
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Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.15 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
3.3 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.02mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts