Vishay P-Channel MOSFET, 4.3 A, 20 V, 3-Pin SOT-23 SI2323DDS-T1-GE3

RS noliktavas nr.: 812-3110Ražotājs: VishayRažotāja kods: SI2323DDS-T1-GE3
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Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

1.4mm

Length

3.04mm

Typical Gate Charge @ Vgs

24 nC @ 8 V

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1.02mm

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 7,94

€ 0,397 Katrs (Paka ir 20) (bez PVN)

€ 9,61

€ 0,48 Katrs (Paka ir 20) (Ieskaitot PVN)

Vishay P-Channel MOSFET, 4.3 A, 20 V, 3-Pin SOT-23 SI2323DDS-T1-GE3
Izvēlēties iepakojuma veidu

€ 7,94

€ 0,397 Katrs (Paka ir 20) (bez PVN)

€ 9,61

€ 0,48 Katrs (Paka ir 20) (Ieskaitot PVN)

Vishay P-Channel MOSFET, 4.3 A, 20 V, 3-Pin SOT-23 SI2323DDS-T1-GE3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
20 - 180€ 0,397€ 7,94
200 - 480€ 0,294€ 5,88
500 - 980€ 0,247€ 4,94
1000 - 1980€ 0,219€ 4,38
2000+€ 0,159€ 3,18

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

1.4mm

Length

3.04mm

Typical Gate Charge @ Vgs

24 nC @ 8 V

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1.02mm

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt