Vishay TrenchFET P-Channel MOSFET, 520 mA, 150 V, 6-Pin SOT-363 SI1411DH-T1-GE3

RS noliktavas nr.: 180-7265Ražotājs: VishayRažotāja kods: SI1411DH-T1-GE3
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Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

520 mA

Maximum Drain Source Voltage

150 V

Series

TrenchFET

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2.6 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

€ 1 242,00

€ 0,414 Katrs (Rulli ir 3000) (bez PVN)

€ 1 502,82

€ 0,501 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Vishay TrenchFET P-Channel MOSFET, 520 mA, 150 V, 6-Pin SOT-363 SI1411DH-T1-GE3

€ 1 242,00

€ 0,414 Katrs (Rulli ir 3000) (bez PVN)

€ 1 502,82

€ 0,501 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Vishay TrenchFET P-Channel MOSFET, 520 mA, 150 V, 6-Pin SOT-363 SI1411DH-T1-GE3
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Ideate. Create. Collaborate

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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

520 mA

Maximum Drain Source Voltage

150 V

Series

TrenchFET

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2.6 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more