Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRLU110PBF

RS noliktavas nr.: 708-4884Ražotājs: VishayRažotāja kods: IRLU110PBF
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Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

100 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

6.1 nC @ 5 V

Width

2.38mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Height

6.22mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 7,25

€ 1,45 Katrs (Paka ir 5) (bez PVN)

€ 8,77

€ 1,754 Katrs (Paka ir 5) (Ieskaitot PVN)

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRLU110PBF
Izvēlēties iepakojuma veidu

€ 7,25

€ 1,45 Katrs (Paka ir 5) (bez PVN)

€ 8,77

€ 1,754 Katrs (Paka ir 5) (Ieskaitot PVN)

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRLU110PBF
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
5 - 45€ 1,45€ 7,25
50 - 120€ 1,15€ 5,75
125 - 245€ 1,10€ 5,50
250 - 495€ 0,948€ 4,74
500+€ 0,877€ 4,38

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

100 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

6.1 nC @ 5 V

Width

2.38mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Height

6.22mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more