Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Width
4.7mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Height
9.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 83.75
€ 3.35 Each (Supplied in a Tube) (Exc. Vat)
€ 101.34
€ 4.054 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
25
€ 83.75
€ 3.35 Each (Supplied in a Tube) (Exc. Vat)
€ 101.34
€ 4.054 Each (Supplied in a Tube) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
25
Stock information temporarily unavailable.
Quantity | Unit price | Per Tube |
---|---|---|
25 - 45 | € 3.35 | € 16.75 |
50 - 120 | € 3.20 | € 16.00 |
125 - 245 | € 2.85 | € 14.25 |
250+ | € 2.70 | € 13.50 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Width
4.7mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Height
9.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details