Tehniskie dokumenti
Specifikācija
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
27.8 W
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
2
Width
3.15mm
Length
3.15mm
Typical Gate Charge @ Vgs
11.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.07mm
Automotive Standard
AEC-Q101
Izcelsmes valsts
China
€ 1 299,00
€ 0,433 Katrs (Rulli ir 3000) (bez PVN)
€ 1 571,79
€ 0,524 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 1 299,00
€ 0,433 Katrs (Rulli ir 3000) (bez PVN)
€ 1 571,79
€ 0,524 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
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Tehniskie dokumenti
Specifikācija
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
27.8 W
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
2
Width
3.15mm
Length
3.15mm
Typical Gate Charge @ Vgs
11.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.07mm
Automotive Standard
AEC-Q101
Izcelsmes valsts
China