Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Number of Elements per Chip
1
Length
15.5mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
20mm
Izcelsmes valsts
Japan
Produkta apraksts
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
€ 145,00
€ 5,80 Katrs (Tubina ir 25) (bez PVN)
€ 175,45
€ 7,018 Katrs (Tubina ir 25) (Ieskaitot PVN)
25
€ 145,00
€ 5,80 Katrs (Tubina ir 25) (bez PVN)
€ 175,45
€ 7,018 Katrs (Tubina ir 25) (Ieskaitot PVN)
25
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Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Number of Elements per Chip
1
Length
15.5mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
20mm
Izcelsmes valsts
Japan
Produkta apraksts