Toshiba DTMOSIV N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W,S4VX(M

RS noliktavas nr.: 125-0532Ražotājs: ToshibaRažotāja kods: TK10A60W,S4VX(M
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Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220SIS

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

30 W

Maximum Gate Source Voltage

-30 V, +30 V

Length

10mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

4.5mm

Forward Diode Voltage

1.7V

Height

15mm

Izcelsmes valsts

Japan

Produkta apraksts

MOSFET Transistors, Toshiba

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Noliktavas stāvoklis patreiz nav pieejams

€ 6,25

€ 1,25 Katrs (Paka ir 5) (bez PVN)

€ 7,56

€ 1,512 Katrs (Paka ir 5) (Ieskaitot PVN)

Toshiba DTMOSIV N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W,S4VX(M

5

Pieejams komplektos pa 5
5€ 6,25
10€ 12,50
15€ 18,75
20€ 25,00
25€ 19,95
30€ 23,94
35€ 27,93
40€ 31,92
45€ 35,91
50€ 38,80
55€ 42,68
60€ 46,56
65€ 50,44
70€ 54,32
75€ 58,20

€ 6,25

€ 1,25 Katrs (Paka ir 5) (bez PVN)

€ 7,56

€ 1,512 Katrs (Paka ir 5) (Ieskaitot PVN)

Toshiba DTMOSIV N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W,S4VX(M
Noliktavas stāvoklis patreiz nav pieejams

5

Pieejams komplektos pa 5
5€ 6,25
10€ 12,50
15€ 18,75
20€ 25,00
25€ 19,95
30€ 23,94
35€ 27,93
40€ 31,92
45€ 35,91
50€ 38,80
55€ 42,68
60€ 46,56
65€ 50,44
70€ 54,32
75€ 58,20

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
5 - 20€ 1,25€ 6,25
25 - 45€ 0,798€ 3,99
50 - 120€ 0,776€ 3,88
125 - 245€ 0,758€ 3,79
250+€ 0,736€ 3,68

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220SIS

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

30 W

Maximum Gate Source Voltage

-30 V, +30 V

Length

10mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

4.5mm

Forward Diode Voltage

1.7V

Height

15mm

Izcelsmes valsts

Japan

Produkta apraksts

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more