Toshiba Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 SSM6N7002KFU

RS noliktavas nr.: 171-2523Ražotājs: ToshibaRažotāja kods: SSM6N7002KFU
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Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.75 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

500 mW

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Width

1.25mm

Length

2mm

Typical Gate Charge @ Vgs

0.39 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.1V

Height

0.9mm

Automotive Standard

AEC-Q101

Izcelsmes valsts

Thailand

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Noliktavas stāvoklis patreiz nav pieejams

€ 7,80

€ 0,078 Katrs (Paka ir 100) (bez PVN)

€ 9,44

€ 0,094 Katrs (Paka ir 100) (Ieskaitot PVN)

Toshiba Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 SSM6N7002KFU
Izvēlēties iepakojuma veidu

€ 7,80

€ 0,078 Katrs (Paka ir 100) (bez PVN)

€ 9,44

€ 0,094 Katrs (Paka ir 100) (Ieskaitot PVN)

Toshiba Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 SSM6N7002KFU
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
100 - 400€ 0,078€ 7,80
500 - 900€ 0,067€ 6,70
1000+€ 0,062€ 6,20

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.75 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

500 mW

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Width

1.25mm

Length

2mm

Typical Gate Charge @ Vgs

0.39 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.1V

Height

0.9mm

Automotive Standard

AEC-Q101

Izcelsmes valsts

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more