STMicroelectronics STripFET H7 N-Channel MOSFET, 90 A, 80 V, 3-Pin TO-220 STP140N8F7
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
80 V
Series
STripFET H7
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.6mm
Length
10.4mm
Typical Gate Charge @ Vgs
96 nC @ 10 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Number of Elements per Chip
1
Height
15.75mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 17,25
€ 3,45 Katrs (Paka ir 5) (bez PVN)
€ 20,87
€ 4,174 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 17,25
€ 3,45 Katrs (Paka ir 5) (bez PVN)
€ 20,87
€ 4,174 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 5 - 5 | € 3,45 | € 17,25 |
| 10+ | € 3,25 | € 16,25 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
80 V
Series
STripFET H7
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.6mm
Length
10.4mm
Typical Gate Charge @ Vgs
96 nC @ 10 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Number of Elements per Chip
1
Height
15.75mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products