STMicroelectronics SCT SiC N-Channel MOSFET, 110 A, 900 V, 7-Pin H2PAK-7 SCT012H90G3AG

RS noliktavas nr.: 215-220Ražotājs: STMicroelectronicsRažotāja kods: SCT012H90G3AG
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

900 V

Series

SCT

Package Type

H²PAK-7

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

€ 70,00

€ 70,00 Katrs (bez PVN)

€ 84,70

€ 84,70 Katrs (Ieskaitot PVN)

STMicroelectronics SCT SiC N-Channel MOSFET, 110 A, 900 V, 7-Pin H2PAK-7 SCT012H90G3AG
Izvēlēties iepakojuma veidu

€ 70,00

€ 70,00 Katrs (bez PVN)

€ 84,70

€ 84,70 Katrs (Ieskaitot PVN)

STMicroelectronics SCT SiC N-Channel MOSFET, 110 A, 900 V, 7-Pin H2PAK-7 SCT012H90G3AG
Noliktavas stāvoklis patreiz nav pieejams
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1 - 9€ 70,00
10+€ 63,00

Ideate. Create. Collaborate

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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

900 V

Series

SCT

Package Type

H²PAK-7

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more