onsemi PowerTrench Dual N-Channel MOSFET, 3 A, 20 V, 6-Pin SOT-23 FDC6401N

RS noliktavas nr.: 809-0852Ražotājs: onsemiRažotāja kods: FDC6401N
brand-logo
Skatīt visu MOSFET tranzistori

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

20 V

Series

PowerTrench

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

106 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

960 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

2

Length

3mm

Typical Gate Charge @ Vgs

3.3 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Width

1.7mm

Transistor Material

Si

Height

1mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Noliktavas stāvoklis patreiz nav pieejams

€ 4,64

€ 0,232 Katrs (tiek piegadats Lente) (bez PVN)

€ 5,61

€ 0,281 Katrs (tiek piegadats Lente) (Ieskaitot PVN)

onsemi PowerTrench Dual N-Channel MOSFET, 3 A, 20 V, 6-Pin SOT-23 FDC6401N
Izvēlēties iepakojuma veidu

€ 4,64

€ 0,232 Katrs (tiek piegadats Lente) (bez PVN)

€ 5,61

€ 0,281 Katrs (tiek piegadats Lente) (Ieskaitot PVN)

onsemi PowerTrench Dual N-Channel MOSFET, 3 A, 20 V, 6-Pin SOT-23 FDC6401N
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

20 V

Series

PowerTrench

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

106 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

960 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

2

Length

3mm

Typical Gate Charge @ Vgs

3.3 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Width

1.7mm

Transistor Material

Si

Height

1mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more