Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
1.5 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-126
Mounting Type
Through Hole
Maximum Power Dissipation
12.5 W
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
8 x 3.25 x 11mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
Small Signal NPN Transistors, 60V to 100V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
€ 12,90
€ 0,215 Katrs (Tubina ir 60) (bez PVN)
€ 15,61
€ 0,26 Katrs (Tubina ir 60) (Ieskaitot PVN)
60
€ 12,90
€ 0,215 Katrs (Tubina ir 60) (bez PVN)
€ 15,61
€ 0,26 Katrs (Tubina ir 60) (Ieskaitot PVN)
60
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Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
1.5 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-126
Mounting Type
Through Hole
Maximum Power Dissipation
12.5 W
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
8 x 3.25 x 11mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
Small Signal NPN Transistors, 60V to 100V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.