Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
15.6 nC @ 10 V
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
P.O.A.
Katrs (Paka ir 50) (bez PVN)
Standarts
50
P.O.A.
Katrs (Paka ir 50) (bez PVN)
Standarts
50
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
15.6 nC @ 10 V
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm