P-Channel MOSFET Transistor, 1.3 A, 20 V, 3-Pin SOT-23 onsemi NTR1P02LT1G

RS noliktavas nr.: 688-9149Ražotājs: ON SemiconductorRažotāja kods: NTR1P02LT1G
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Specifikācija

Channel Type

P

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

220 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

400 mW

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

5.5 nC @ 4 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.9mm

Width

1.3mm

Minimum Operating Temperature

-55 °C

Height

0.94mm

Produkta apraksts

MOSFETs - P-Channel

The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.

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P.O.A.

Katrs (Paka ir 2) (bez PVN)

P-Channel MOSFET Transistor, 1.3 A, 20 V, 3-Pin SOT-23 onsemi NTR1P02LT1G

P.O.A.

Katrs (Paka ir 2) (bez PVN)

P-Channel MOSFET Transistor, 1.3 A, 20 V, 3-Pin SOT-23 onsemi NTR1P02LT1G
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

220 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

400 mW

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

5.5 nC @ 4 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.9mm

Width

1.3mm

Minimum Operating Temperature

-55 °C

Height

0.94mm

Produkta apraksts

MOSFETs - P-Channel

The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt