Nexperia N-Channel MOSFET, 100 A, 40 V, 4-Pin LFPAK, SOT-669 PSMN2R6-40YS,115

RS noliktavas nr.: 798-2937Ražotājs: NexperiaRažotāja kods: PSMN2R6-40YS
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

3.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

131 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

4.1mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.1mm

Izcelsmes valsts

Philippines

Produkta apraksts

N-Channel MOSFET, 40V to 55V

MOSFET Transistors, NXP Semiconductors

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Noliktavas stāvoklis patreiz nav pieejams

€ 4,92

€ 0,984 Katrs (Paka ir 5) (bez PVN)

€ 5,95

€ 1,191 Katrs (Paka ir 5) (Ieskaitot PVN)

Nexperia N-Channel MOSFET, 100 A, 40 V, 4-Pin LFPAK, SOT-669 PSMN2R6-40YS,115
Izvēlēties iepakojuma veidu

€ 4,92

€ 0,984 Katrs (Paka ir 5) (bez PVN)

€ 5,95

€ 1,191 Katrs (Paka ir 5) (Ieskaitot PVN)

Nexperia N-Channel MOSFET, 100 A, 40 V, 4-Pin LFPAK, SOT-669 PSMN2R6-40YS,115
Noliktavas stāvoklis patreiz nav pieejams
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Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

3.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

131 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

4.1mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.1mm

Izcelsmes valsts

Philippines

Produkta apraksts

N-Channel MOSFET, 40V to 55V

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more