Nexperia P-Channel MOSFET, 3.9 A, 20 V, 3-Pin SOT-23 PMV65XP,215

RS noliktavas nr.: 134-295Ražotājs: NexperiaRažotāja kods: PMV65XP,215
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Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

76 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.47V

Maximum Power Dissipation

1.92 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

7.6 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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Noliktavas stāvoklis patreiz nav pieejams

€ 18,10

€ 0,362 Katrs (Paka ir 50) (bez PVN)

€ 21,90

€ 0,438 Katrs (Paka ir 50) (Ieskaitot PVN)

Nexperia P-Channel MOSFET, 3.9 A, 20 V, 3-Pin SOT-23 PMV65XP,215
Izvēlēties iepakojuma veidu

€ 18,10

€ 0,362 Katrs (Paka ir 50) (bez PVN)

€ 21,90

€ 0,438 Katrs (Paka ir 50) (Ieskaitot PVN)

Nexperia P-Channel MOSFET, 3.9 A, 20 V, 3-Pin SOT-23 PMV65XP,215
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
50 - 550€ 0,362€ 18,10
600 - 1450€ 0,195€ 9,75
1500+€ 0,164€ 8,20

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

76 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.47V

Maximum Power Dissipation

1.92 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

7.6 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more