Tehniskie dokumenti
Specifikācija
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.25V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
415 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Width
1.4mm
Length
3mm
Typical Gate Charge @ Vgs
8.5 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
€ 828,00
€ 0,276 Katrs (Rulli ir 3000) (bez PVN)
€ 1 001,88
€ 0,334 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 828,00
€ 0,276 Katrs (Rulli ir 3000) (bez PVN)
€ 1 001,88
€ 0,334 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
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Tehniskie dokumenti
Specifikācija
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.25V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
415 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Width
1.4mm
Length
3mm
Typical Gate Charge @ Vgs
8.5 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Izcelsmes valsts
China
Produkta apraksts