Tehniskie dokumenti
Specifikācija
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
30 mA
Maximum Drain Source Voltage
500 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 kΩ
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
740 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
5.2mm
Maximum Operating Temperature
+150 °C
Width
4.19mm
Height
5.33mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
€ 12,62
€ 0,631 Katrs (Paka ir 20) (bez PVN)
€ 15,27
€ 0,764 Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
€ 12,62
€ 0,631 Katrs (Paka ir 20) (bez PVN)
€ 15,27
€ 0,764 Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
20 - 20 | € 0,631 | € 12,62 |
40 - 80 | € 0,598 | € 11,96 |
100+ | € 0,535 | € 10,70 |
Tehniskie dokumenti
Specifikācija
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
30 mA
Maximum Drain Source Voltage
500 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 kΩ
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
740 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
5.2mm
Maximum Operating Temperature
+150 °C
Width
4.19mm
Height
5.33mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.