Infineon HEXFET N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK IRFS3307ZTRRPBF

RS noliktavas nr.: 218-3118PRažotājs: InfineonRažotāja kods: IRFS3307ZTRRPBF
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Tehniskie dokumenti

Specifikācija

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

128 A

Maximum Drain Source Voltage

75 V

Package Type

D2PAK (TO-263)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0058 Ω

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1

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Noliktavas stāvoklis patreiz nav pieejams

€ 8,71

€ 0,871 Katrs (tiek piegadats Rulli) (bez PVN)

€ 10,54

€ 1,054 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Infineon HEXFET N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK IRFS3307ZTRRPBF
Izvēlēties iepakojuma veidu

Industriālais iepakojums (Rullis)

Izvēlēties iepakojuma veidu

Standarts - each

Pieejams komplektos pa 10.

Ražošana -

Pieejams komplektos pa 10.

Ieteicams pasūtot lielos daudzumos. Preces ir iepakotas gatavas ievietošanai iekārtās, kas ļauj uzlabot ražošanas efektivitāti.

10

Pieejams komplektos pa 10
10€ 8,71
20€ 17,42
30€ 26,13
40€ 34,84
50€ 43,55
60€ 52,26
70€ 60,97
80€ 69,68
90€ 78,39
100€ 87,10
110€ 95,81
120€ 104,52
130€ 113,23
140€ 121,94
150€ 130,65

€ 8,71

€ 0,871 Katrs (tiek piegadats Rulli) (bez PVN)

€ 10,54

€ 1,054 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Infineon HEXFET N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK IRFS3307ZTRRPBF
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Industriālais iepakojums (Rullis)

Izvēlēties iepakojuma veidu

Standarts - each

Pieejams komplektos pa 10.

Ražošana -

Pieejams komplektos pa 10.

Ieteicams pasūtot lielos daudzumos. Preces ir iepakotas gatavas ievietošanai iekārtās, kas ļauj uzlabot ražošanas efektivitāti.

10

Pieejams komplektos pa 10
10€ 8,71
20€ 17,42
30€ 26,13
40€ 34,84
50€ 43,55
60€ 52,26
70€ 60,97
80€ 69,68
90€ 78,39
100€ 87,10
110€ 95,81
120€ 104,52
130€ 113,23
140€ 121,94
150€ 130,65

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

128 A

Maximum Drain Source Voltage

75 V

Package Type

D2PAK (TO-263)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0058 Ω

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more