Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 24 A, 150 V, 3-Pin DPAK IRFR24N15DTRPBF
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
150 V
Package Type
DPAK (TO-252)
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.095 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
30V
Number of Elements per Chip
2
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€ 1 104,00
€ 0,552 Katrs (Rulli ir 2000) (bez PVN)
€ 1 335,84
€ 0,668 Katrs (Rulli ir 2000) (Ieskaitot PVN)
2000
€ 1 104,00
€ 0,552 Katrs (Rulli ir 2000) (bez PVN)
€ 1 335,84
€ 0,668 Katrs (Rulli ir 2000) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
2000
Noliktavas stāvoklis patreiz nav pieejams
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
150 V
Package Type
DPAK (TO-252)
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.095 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
30V
Number of Elements per Chip
2
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products