N-Channel MOSFET, 50 A, 150 V, 3-Pin TO-220 Infineon IPP200N15N3 G
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
150 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
4.57mm
Number of Elements per Chip
1
Transistor Material
Si
Height
15.95mm
Series
OptiMOS 3
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
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P.O.A.
Katrs (tiek piegadats Tubina) (bez PVN)
Industriālais iepakojums (Penālis)
5
P.O.A.
Katrs (tiek piegadats Tubina) (bez PVN)
Industriālais iepakojums (Penālis)
5
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
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Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
150 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
4.57mm
Number of Elements per Chip
1
Transistor Material
Si
Height
15.95mm
Series
OptiMOS 3
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products