Infineon OptiMOS™ N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 2N7002H6327XTSA2

RS noliktavas nr.: 752-7773PRažotājs: InfineonRažotāja kods: 2N7002H6327XTSA2
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

2.9mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

0.4 nC @ 10 V

Width

1.3mm

Height

1mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

Infineon OptiMOS™ Small Signal MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Noliktavas stāvoklis patreiz nav pieejams

€ 2,70

€ 0,027 Katrs (tiek piegadats Rulli) (bez PVN)

€ 3,27

€ 0,033 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Infineon OptiMOS™ N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 2N7002H6327XTSA2
Izvēlēties iepakojuma veidu

€ 2,70

€ 0,027 Katrs (tiek piegadats Rulli) (bez PVN)

€ 3,27

€ 0,033 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Infineon OptiMOS™ N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 2N7002H6327XTSA2
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Ideate. Create. Collaborate

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No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

2.9mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

0.4 nC @ 10 V

Width

1.3mm

Height

1mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

Infineon OptiMOS™ Small Signal MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more