Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
2.1 A, 5.2 A
Maximum Drain Source Voltage
20 V
Package Type
TSOT-26
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
56 mΩ, 168 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
12 nC @ 10 V, 14 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
2
Width
1.65mm
Length
2.95mm
Minimum Operating Temperature
-55 °C
Height
0.9mm
Izcelsmes valsts
China
Produkta apraksts
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
€ 4,45
€ 0,089 Katrs (tiek piegadats Rulli) (bez PVN)
€ 5,38
€ 0,108 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
50
€ 4,45
€ 0,089 Katrs (tiek piegadats Rulli) (bez PVN)
€ 5,38
€ 0,108 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
50
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Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
2.1 A, 5.2 A
Maximum Drain Source Voltage
20 V
Package Type
TSOT-26
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
56 mΩ, 168 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
12 nC @ 10 V, 14 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
2
Width
1.65mm
Length
2.95mm
Minimum Operating Temperature
-55 °C
Height
0.9mm
Izcelsmes valsts
China
Produkta apraksts