Diodes Inc P-Channel MOSFET, 230 mA, 45 V, 3-Pin E-Line BS250P

RS noliktavas nr.: 215-6688PRažotājs: DiodesZetexRažotāja kods: BS250P
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Specifikācija

Channel Type

P

Maximum Continuous Drain Current

230 mA

Maximum Drain Source Voltage

45 V

Package Type

E-Line

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

14 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.41mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.77mm

Maximum Operating Temperature

+150 °C

Height

4.01mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Noliktavas stāvoklis patreiz nav pieejams

€ 20,40

€ 0,51 Katrs (tiek piegadats Lente) (bez PVN)

€ 24,68

€ 0,617 Katrs (tiek piegadats Lente) (Ieskaitot PVN)

Diodes Inc P-Channel MOSFET, 230 mA, 45 V, 3-Pin E-Line BS250P
Izvēlēties iepakojuma veidu

€ 20,40

€ 0,51 Katrs (tiek piegadats Lente) (bez PVN)

€ 24,68

€ 0,617 Katrs (tiek piegadats Lente) (Ieskaitot PVN)

Diodes Inc P-Channel MOSFET, 230 mA, 45 V, 3-Pin E-Line BS250P
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Lente
40 - 195€ 0,51€ 2,55
200 - 995€ 0,443€ 2,22
1000 - 1995€ 0,382€ 1,91
2000+€ 0,347€ 1,74

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

230 mA

Maximum Drain Source Voltage

45 V

Package Type

E-Line

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

14 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.41mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.77mm

Maximum Operating Temperature

+150 °C

Height

4.01mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more