Tehniskie dokumenti
Specifikācija
Brand
ams OSRAMSpectrums Detected
Infrared, Ultraviolet, Visible Light
Number of Channels
1
Maximum Light Current
8µA
Maximum Dark Current
3nA
Angle of Half Sensitivity
150 °
Polarity
NPN
Number of Pins
2
Mounting Type
Through Hole
Package Type
3mm (T-1)
Dimensions
4 x 4 x 3.1mm
Collector Current
20mA
Maximum Wavelength Detected
940nm
Minimum Wavelength Detected
350nm
Spectral Range of Sensitivity
350 → 940 nm
Height
3.1mm
Length
4mm
Width
4mm
Produkta apraksts
Ambient Light Sensors - Vlambda
A range of NPN silicon phototransistors from OSRAM Opto Semiconductors, with improved V lambda characteristics. These compact phototransistors are suitable for a wide range of applications including; ambient light detectors, exposure meters for both daylight and artificial light, sensor for backlight dimming and for control and drive circuits.
Ambient Light Sensors, OSRAM Opto Semiconductors
€ 19,18
€ 0,959 Katrs (tiek piegadats Lente) (bez PVN)
€ 23,21
€ 1,16 Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Industriālais iepakojums (Lente)
20
€ 19,18
€ 0,959 Katrs (tiek piegadats Lente) (bez PVN)
€ 23,21
€ 1,16 Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Lente)
20
Noliktavas stāvoklis patreiz nav pieejams
| Daudzums | Vienības cena | Per Lente |
|---|---|---|
| 20 - 95 | € 0,959 | € 4,80 |
| 100 - 495 | € 0,67 | € 3,35 |
| 500 - 995 | € 0,508 | € 2,54 |
| 1000+ | € 0,42 | € 2,10 |
Tehniskie dokumenti
Specifikācija
Brand
ams OSRAMSpectrums Detected
Infrared, Ultraviolet, Visible Light
Number of Channels
1
Maximum Light Current
8µA
Maximum Dark Current
3nA
Angle of Half Sensitivity
150 °
Polarity
NPN
Number of Pins
2
Mounting Type
Through Hole
Package Type
3mm (T-1)
Dimensions
4 x 4 x 3.1mm
Collector Current
20mA
Maximum Wavelength Detected
940nm
Minimum Wavelength Detected
350nm
Spectral Range of Sensitivity
350 → 940 nm
Height
3.1mm
Length
4mm
Width
4mm
Produkta apraksts
Ambient Light Sensors - Vlambda
A range of NPN silicon phototransistors from OSRAM Opto Semiconductors, with improved V lambda characteristics. These compact phototransistors are suitable for a wide range of applications including; ambient light detectors, exposure meters for both daylight and artificial light, sensor for backlight dimming and for control and drive circuits.


