JFETs

JFETs
A JFET is a four terminal device, the terminals are called gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs an N-Channel & P-Channel.
What does JFET stand for?
JFET stands for junction field-effect transistor
N-Channel JFET Construction
The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
P-Channel JFET Construction
The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
Features and Benefits
• High input impedance
• Voltage controlled device
• High degree of isolation between the input and the output
• Less noise
What are they also known as?
JUGFET
What are JFET transistors used for?
JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.
What is the difference between a JFET & BJT (Bipolar Junction Transistor)?
The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carrier flows.
What is doping of semiconductors?
Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.
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Produkta apraksts Brand Stock Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions Height Width Length Maximum Operating Temperature Minimum Operating Temperature
NXP PMBFJ309,215 N-Channel JFET, 25 V, Idss 12 → 30mA, 3-Pin SOT-23
  • RS noliktavas numurs 179-1061
  • Zīmols NXP
  • Ražotāja numurs PMBFJ309,215
NXP 0 N 12 → 30mA 25 V -25 V -25V Single Single 50 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm 1mm 1.4mm 3mm +150 °C -65 °C
Semelab 2N4392CSM N-Channel JFET, 40 V, Idss 25 → 75mA, 3-Pin SOT-23
  • RS noliktavas numurs 177-5508
  • Zīmols Semelab
  • Ražotāja numurs 2N4392CSM
Semelab 0 N 25 → 75mA 40 V +40 V 40V Single Single 60 Ω Surface Mount SOT-23 3 - - 3.05 x 2.54 x 1.02mm 1.02mm 2.54mm 3.05mm +175 °C -65 °C
ON Semiconductor BSR58 N-Channel JFET, 0.4 V, Idss 8 → 80mA, 3-Pin SOT-23 ON Semiconductor 37200 N 8 → 80mA 0.4 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.97mm 0.97mm 1.3mm 2.9mm +150 °C -
ON Semiconductor MMBFJ177 P-Channel JFET, Idss 1.5 → 20mA, 3-Pin SOT-23 ON Semiconductor 25663 P 1.5 → 20mA - +30 V -30V Single Single 300 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm 0.93mm 1.3mm 2.92mm +150 °C -55 °C
ON Semiconductor MMBFJ176 P-Channel JFET, 15 V, Idss -2 → -25mA, 3-Pin SOT-23 ON Semiconductor 17800 P -2 → -25mA 15 V +30 V -30V Single Single 250 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm 0.93mm 1.3mm 2.92mm +150 °C -55 °C
ON Semiconductor MMBF5485 N-Channel JFET, Idss 4 → 10mA, 3-Pin SOT-23 ON Semiconductor 16900 N 4 → 10mA - - - Single Single - Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm 0.93mm 1.3mm 2.92mm +150 °C -55 °C
ON Semiconductor MMBFJ309 N-Channel JFET, 10 V, Idss 12 → 30mA, 3-Pin SOT-23 ON Semiconductor 12250 N 12 → 30mA 10 V -25 V - Single Single - Surface Mount SOT-23 3 2.5pF 5pF 2.92 x 1.3 x 0.93mm 0.93mm 1.3mm 2.92mm +150 °C -55 °C
ON Semiconductor MMBF4393 N-Channel JFET, 0.4 V, Idss 5 → 30mA, 3-Pin SOT-23 ON Semiconductor 12225 N 5 → 30mA 0.4 V -30 V 30V Single Single 100 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm 0.93mm 1.3mm 2.92mm +150 °C -55 °C
ON Semiconductor MMBF5103 N-Channel JFET, 20 V, Idss 10 → 40mA, 3-Pin SOT-23 ON Semiconductor 10650 N 10 → 40mA 20 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 1.04mm 1.04mm 1.3mm 2.9mm +150 °C -55 °C
ON Semiconductor MMBF5459 N-Channel JFET, Idss 4 → 16mA, 3-Pin SOT-23 ON Semiconductor 8800 N 4 → 16mA - -25 V 25V Single Single - Surface Mount SOT-23 3 3pF 7pF 2.92 x 1.3 x 0.93mm 0.93mm 1.3mm 2.92mm +150 °C -55 °C
NXP BF510,215 N-Channel JFET, 20 V, Idss 0.7 → 3.0mA, 3-Pin SOT-23
  • RS noliktavas numurs 626-2282
  • Zīmols NXP
  • Ražotāja numurs BF510,215
NXP 8770 N 0.7 → 3.0mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm 1mm 1.4mm 3mm +150 °C -65 °C
ON Semiconductor TF412ST5G N-Channel JFET, 30 V, Idss 1.2 → 3mA, 3-Pin SOT-883 ON Semiconductor 8300 N 1.2 → 3mA 30 V - -30V Single Single - Surface Mount SOT-883 3 4pF 4pF 1.08 x 0.68 x 0.41mm 0.41mm 0.68mm 1.08mm +150 °C -
ON Semiconductor TF414T5G N-Channel JFET, 40 V, Idss 0.05 → 0.13mA, 3-Pin SOT-883 ON Semiconductor 8300 N 0.05 → 0.13mA 40 V - -40V Single Single - Surface Mount SOT-883 3 0.7pF 0.3pF 1.07 x 0.67 x 0.41mm 0.41mm 0.67mm 1.07mm +150 °C -
ON Semiconductor MMBFJ111 N-Channel JFET, 15 V, Idss 20mA, 3-Pin SOT-23 ON Semiconductor 8250 N 20mA 15 V -35 V 35V Single Single 30 Ω Surface Mount SOT-23 3 28pF 28pF 2.9 x 1.3 x 1.04mm 1.04mm 1.3mm 2.9mm +150 °C -55 °C
ON Semiconductor MMBFJ110 N-Channel JFET, 15 V, Idss Min. 10mA, 3-Pin SOT-23 ON Semiconductor 7450 N min. 10mA 15 V -25 V 25V Single Single 18 Ω Surface Mount SOT-23 3 85pF 85pF 2.92 x 1.4 x 0.94mm 0.94mm 1.4mm 2.92mm +150 °C -55 °C
Panasonic DSK9J01P0L N-Channel JFET, Idss 1 → 3mA, 3-Pin SSMini3 F3 B Panasonic 6240 N 1 → 3mA - - -55V Single Single - Surface Mount SSMini3 F3 B 3 - - 1.6 x 0.85 x 0.7mm 0.7mm 0.85mm 1.6mm +150 °C -
ON Semiconductor BSR57 N-Channel JFET, 0.5 V, Idss 20 → 100mA, 3-Pin SOT-23 ON Semiconductor 5950 N 20 → 100mA 0.5 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.97mm 0.97mm 1.3mm 2.9mm +150 °C -
ON Semiconductor MMBF4093 N-Channel JFET, 0.2 V, Idss min. 8mA, 3-Pin SOT-23 ON Semiconductor 5950 N min. 8mA 0.2 V -40 V 40V Single Single 80 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm 0.93mm 1.3mm 2.92mm +150 °C -55 °C
ON Semiconductor 2SK3666-2-TB-E N-Channel JFET, 30 V, Idss 0.6 → 1.5mA, 3-Pin SOT-23 ON Semiconductor 5900 N 0.6 → 1.5mA 30 V - -30V Single Single 200 Ω Surface Mount SOT-23 3 - - 2.9 x 1.5 x 1.1mm 1.1mm 1.5mm 2.9mm +150 °C -
ON Semiconductor MMBF4391 N-Channel JFET, 0.4 V, Idss 50 → 150mA, 3-Pin SOT-23 ON Semiconductor 4900 N 50 → 150mA 0.4 V -30 V 30V Single Single 30 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm 0.93mm 1.3mm 2.92mm +150 °C -55 °C
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