Tehniskie dokumenti
Specifikācija
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
120 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Maximum Power Dissipation
100 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+125 °C
Dimensions
2 x 1.25 x 0.9mm
Izcelsmes valsts
Japan
Produkta apraksts
Small Signal NPN Transistors, Toshiba
Bipolar Transistors, Toshiba
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,312
Katrs (Paka ir 25) (bez PVN)
€ 0,378
Katrs (Paka ir 25) (Ieskaitot PVN)
25
€ 0,312
Katrs (Paka ir 25) (bez PVN)
€ 0,378
Katrs (Paka ir 25) (Ieskaitot PVN)
25
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
25 - 100 | € 0,312 | € 7,80 |
125 - 225 | € 0,23 | € 5,75 |
250 - 475 | € 0,225 | € 5,62 |
500 - 1225 | € 0,218 | € 5,45 |
1250+ | € 0,214 | € 5,35 |
Tehniskie dokumenti
Specifikācija
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
120 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Maximum Power Dissipation
100 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+125 °C
Dimensions
2 x 1.25 x 0.9mm
Izcelsmes valsts
Japan
Produkta apraksts