Tehniskie dokumenti
Specifikācija
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
120 V
Package Type
SOT-346 (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
120 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+125 °C
Izcelsmes valsts
Japan
Produkta apraksts
Small Signal NPN Transistors, Toshiba
Bipolar Transistors, Toshiba
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,25
Katrs (Paka ir 25) (bez PVN)
€ 0,302
Katrs (Paka ir 25) (Ieskaitot PVN)
25
€ 0,25
Katrs (Paka ir 25) (bez PVN)
€ 0,302
Katrs (Paka ir 25) (Ieskaitot PVN)
25
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
25 - 100 | € 0,25 | € 6,25 |
125 - 225 | € 0,22 | € 5,50 |
250 - 475 | € 0,214 | € 5,35 |
500 - 1225 | € 0,209 | € 5,22 |
1250+ | € 0,204 | € 5,10 |
Tehniskie dokumenti
Specifikācija
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
120 V
Package Type
SOT-346 (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
120 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+125 °C
Izcelsmes valsts
Japan
Produkta apraksts