Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
145 A
Maximum Drain Source Voltage
40 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
13 nC @ 4.5 V
Width
5mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.1mm
Produkta apraksts
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,50
Katrs (tiek piegadats Rulli) (bez PVN)
€ 1,815
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
5
€ 1,50
Katrs (tiek piegadats Rulli) (bez PVN)
€ 1,815
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
5 - 45 | € 1,50 | € 7,50 |
50 - 95 | € 1,20 | € 6,00 |
100 - 245 | € 0,91 | € 4,55 |
250 - 495 | € 0,855 | € 4,28 |
500+ | € 0,80 | € 4,00 |
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
145 A
Maximum Drain Source Voltage
40 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
13 nC @ 4.5 V
Width
5mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.1mm
Produkta apraksts