Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
6.2 nC @ 4.5 V
Width
3.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Series
NexFET
Produkta apraksts
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,05
Katrs (tiek piegadats Rulli) (bez PVN)
€ 1,27
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
5
€ 1,05
Katrs (tiek piegadats Rulli) (bez PVN)
€ 1,27
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
5 - 20 | € 1,05 | € 5,25 |
25+ | € 0,824 | € 4,12 |
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
6.2 nC @ 4.5 V
Width
3.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Series
NexFET
Produkta apraksts