Tehniskie dokumenti
Specifikācija
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
20 V
Package Type
TSSOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.04 W
Transistor Configuration
Common Drain
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
15 nC @ 4.5 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
4.5mm
Width
3.1mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.05mm
Produkta apraksts
Dual N-Channel Power MOSFET, Taiwan Semiconductor
MOSFET Transistors, Taiwan Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,402
Katrs (Paka ir 50) (bez PVN)
€ 0,486
Katrs (Paka ir 50) (Ieskaitot PVN)
50
€ 0,402
Katrs (Paka ir 50) (bez PVN)
€ 0,486
Katrs (Paka ir 50) (Ieskaitot PVN)
50
Tehniskie dokumenti
Specifikācija
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
20 V
Package Type
TSSOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.04 W
Transistor Configuration
Common Drain
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
15 nC @ 4.5 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
4.5mm
Width
3.1mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.05mm
Produkta apraksts