Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
2 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
350 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
10 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,252
Katrs (Tubina ir 50) (bez PVN)
€ 0,305
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 0,252
Katrs (Tubina ir 50) (bez PVN)
€ 0,305
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
2 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
350 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
10 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.