Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
42 A
Maximum Drain Source Voltage
60 V
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.35mm
Typical Gate Charge @ Vgs
30 nC @ 4.5 V
Height
0.95mm
Series
STripFET
Forward Diode Voltage
1.1V
Produkta apraksts
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,984
Katrs (Rulli ir 3000) (bez PVN)
€ 1,191
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,984
Katrs (Rulli ir 3000) (bez PVN)
€ 1,191
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
42 A
Maximum Drain Source Voltage
60 V
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.35mm
Typical Gate Charge @ Vgs
30 nC @ 4.5 V
Height
0.95mm
Series
STripFET
Forward Diode Voltage
1.1V
Produkta apraksts
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.