STMicroelectronics STGWA75H65DFB2 IGBT, 115 A 650 V, 3-Pin TO-247
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsMaximum Continuous Collector Current
115 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
1
Maximum Power Dissipation
357 W
Package Type
TO-247
Pin Count
3
Transistor Configuration
Single
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 5,20
Katrs (tiek piegadats Tubina) (bez PVN)
€ 6,292
Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
10
€ 5,20
Katrs (tiek piegadats Tubina) (bez PVN)
€ 6,292
Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
10
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsMaximum Continuous Collector Current
115 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
1
Maximum Power Dissipation
357 W
Package Type
TO-247
Pin Count
3
Transistor Configuration
Single
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products