Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Series
STripFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
14.1 nC @ 10 V
Width
6.2mm
Height
2.4mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 11,00
€ 1,10 Katrs (tiek piegadats Rulli) (bez PVN)
€ 13,31
€ 1,331 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
10
€ 11,00
€ 1,10 Katrs (tiek piegadats Rulli) (bez PVN)
€ 13,31
€ 1,331 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Rullis)
10
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Rullis |
---|---|---|
10 - 95 | € 1,10 | € 5,50 |
100 - 495 | € 0,836 | € 4,18 |
500 - 995 | € 0,705 | € 3,52 |
1000+ | € 0,568 | € 2,84 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Series
STripFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
14.1 nC @ 10 V
Width
6.2mm
Height
2.4mm
Minimum Operating Temperature
-55 °C
Produkta apraksts