STMicroelectronics STripFET II N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK STB80NF10T4
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Series
STripFET II
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
135 nC @ 10 V
Width
9.35mm
Transistor Material
Si
Height
4.6mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 2,30
€ 1,15 Katrs (Paka ir 2) (bez PVN)
€ 2,78
€ 1,392 Katrs (Paka ir 2) (Ieskaitot PVN)
Standarts
2
€ 2,30
€ 1,15 Katrs (Paka ir 2) (bez PVN)
€ 2,78
€ 1,392 Katrs (Paka ir 2) (Ieskaitot PVN)
Standarts
2
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Series
STripFET II
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
135 nC @ 10 V
Width
9.35mm
Transistor Material
Si
Height
4.6mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products