Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Package Type
D2PAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
230 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Width
9.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Height
4.37mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 2,80
Katrs (Paka ir 5) (bez PVN)
€ 3,388
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 2,80
Katrs (Paka ir 5) (bez PVN)
€ 3,388
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 45 | € 2,80 | € 14,00 |
50 - 95 | € 2,40 | € 12,00 |
100 - 245 | € 2,10 | € 10,50 |
250 - 495 | € 1,95 | € 9,75 |
500+ | € 1,75 | € 8,75 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Package Type
D2PAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
230 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Width
9.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Height
4.37mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Izcelsmes valsts
China