Tehniskie dokumenti
Specifikācija
Brand
SemikronMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
SEMITOP1
Configuration
Single
Mounting Type
PCB Mount
Channel Type
N
Pin Count
4
Transistor Configuration
Single
Dimensions
31 x 24 x 15.43mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
Italy
Produkta apraksts
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 22,40
Katrs (bez PVN)
€ 27,10
Katrs (Ieskaitot PVN)
1
€ 22,40
Katrs (bez PVN)
€ 27,10
Katrs (Ieskaitot PVN)
1
Tehniskie dokumenti
Specifikācija
Brand
SemikronMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
SEMITOP1
Configuration
Single
Mounting Type
PCB Mount
Channel Type
N
Pin Count
4
Transistor Configuration
Single
Dimensions
31 x 24 x 15.43mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
Italy
Produkta apraksts
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.