Tehniskie dokumenti
Specifikācija
Brand
PanasonicChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Package Type
HSO8-F4-B
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+85 °C
Transistor Material
Si
Length
4.9mm
Typical Gate Charge @ Vgs
22 nC @ 4.5 V
Height
0.95mm
Series
SK
Minimum Operating Temperature
-40 °C
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, Panasonic
MOSFET Transistors, Panasonic
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,364
Katrs (Rulli ir 3000) (bez PVN)
€ 0,44
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,364
Katrs (Rulli ir 3000) (bez PVN)
€ 0,44
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Tehniskie dokumenti
Specifikācija
Brand
PanasonicChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Package Type
HSO8-F4-B
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+85 °C
Transistor Material
Si
Length
4.9mm
Typical Gate Charge @ Vgs
22 nC @ 4.5 V
Height
0.95mm
Series
SK
Minimum Operating Temperature
-40 °C
Izcelsmes valsts
China
Produkta apraksts