Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
430 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
280 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
2
Width
1.3mm
Length
1.7mm
Typical Gate Charge @ Vgs
1.7 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
0.6mm
Izcelsmes valsts
Malaysia
Produkta apraksts
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 440,00
€ 0,11 Katrs (Rulli ir 4000) (bez PVN)
€ 532,40
€ 0,133 Katrs (Rulli ir 4000) (Ieskaitot PVN)
4000
€ 440,00
€ 0,11 Katrs (Rulli ir 4000) (bez PVN)
€ 532,40
€ 0,133 Katrs (Rulli ir 4000) (Ieskaitot PVN)
4000
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Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
430 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
280 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
2
Width
1.3mm
Length
1.7mm
Typical Gate Charge @ Vgs
1.7 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
0.6mm
Izcelsmes valsts
Malaysia
Produkta apraksts